Stability and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si57.svg"><mml:mrow><mml:msub><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">min</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math> analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability

For the first time, we analyse SRAM cells made of ferroelectric based negative capacitance (NC) FinFETs considering both global and local variability via Monte-Carlo circuit simulations. First compare explain impact on device characteristics extracted figures merit conventional NC transistors. Then show that suppressed relative in NCFETs leads to lowering static Vmin (minimum supply voltage needed for operation) compared FinFET SRAM. We use a physics compact model realized by self-consistent coupling standard BSIM-CMG with Landau-Khalatnikov (L-K) ferroelectrics. demonstrate including thickness material parameters as well, advantage diminishes. baseline FinFET, have used cards from freely available predictive process design kit (PDK) 7 nm technology node where are optimized applications.